Please use this identifier to cite or link to this item:
http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2450| Title: | Electron Raman scattering in a double quantum well tuned by an external nonresonant intense laser field |
| Authors: | Tiutiunnyk, A. Mora Ramos, Miguel Eduardo Morales Aramburo, Álvaro Luis Duque, Carlos Alberto Restrepo Arango, Ricardo León Ungan, F. Martínez Orozco, Juan Carlos Kasapoglu, E. |
| Issue Date: | Feb-2017 |
| Publisher: | Elsevier |
| Abstract: | In this work we shall present a study of inelastic light scattering involving inter-subband electron transitions in coupled GaAs-(Ga,Al)As quantum wells. Calculations include the electron related Raman differential cross section and Raman gain. The effects of an external nonresonant intense laser field are used in order to tune these output properties. The confined electron states will be described by means of a diagonalization procedure within the effective mass and parabolic band approximations. It is shown that the application of the intense laser field can produce values of the intersubband electron Raman gain above cm−1. The system proposed here is an alternative choice for the development of AlxGa1−xAs semiconductor laser diodes that can be tuned via an external nonresonant intense laser field. |
| URI: | http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2450 https://doi.org/10.48779/1c5k-pb76 |
| ISSN: | 0925-3467 |
| Other Identifiers: | info:eu-repo/semantics/publishedVersion |
| Appears in Collections: | *Documentos Académicos*-- Doc. en Ciencias Básicas |
This item is licensed under a Creative Commons License
