Please use this identifier to cite or link to this item: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2453
Full metadata record
DC FieldValueLanguage
dc.contributor39645es_ES
dc.contributor.otherhttps://orcid.org/0000-0001-8373-1535-
dc.coverage.spatialGlobales_ES
dc.creatorMartínez Orozco, Juan Carlos-
dc.creatorRodríguez Magdaleno, K.A.-
dc.creatorSuárez López, J.R.-
dc.creatorDuque, Carlos Alberto-
dc.creatorRestrepo Arango, Ricardo León-
dc.date.accessioned2021-05-04T20:01:46Z-
dc.date.available2021-05-04T20:01:46Z-
dc.date.issued2016-04-
dc.identifierinfo:eu-repo/semantics/publishedVersiones_ES
dc.identifier.issn0749-6036es_ES
dc.identifier.urihttp://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2453-
dc.identifier.urihttps://doi.org/10.48779/p6qr-0x08-
dc.description.abstractIn this work we present theoretical results for the electronic structure as well as for the absorption coefficient and relative refractive index change for an asymmetric double δ-doped like confining potential in the active region of a Multiple Independent Gate Field Effect Transistor (MIGFET) system. We model the potential profile as a double δ-doped like potential profile between two Schottky (parabolic) potential barriers that are just the main characteristics of the MIGFET configuration. We investigate the effect of external electromagnetic fields in this kind of quantum structures, in particular we applied a homogeneous constant electric field in the growth direction z as well as a homogeneous constant magnetic field in the x-direction. In general we conclude that by applying electromagnetic fields we can modulate the resonant peaks of the absorption coefficient as well as their energy position. Also with such probes it is possible to control the nodes and amplitude of the relative refractive index changes related to resonant intersubband optical transitions.es_ES
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.relationhttps://doi.org/10.1016/j.spmi.2016.02.034es_ES
dc.relation.urigeneralPublices_ES
dc.rightsAtribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.sourceSuperlattices and Microstructures Volume 92, April 2016, Pages 166-173es_ES
dc.subject.classificationCIENCIAS FISICO MATEMATICAS Y CIENCIAS DE LA TIERRA [1]es_ES
dc.subject.otherAbsorption coefficientes_ES
dc.subject.otherδ-dopinges_ES
dc.subject.otherRelative refractive index changees_ES
dc.subject.otherGaAses_ES
dc.titleAbsorption coefficient and relative refractive index change for a double δ-doped GaAs MIGFET-like structure: Electric and magnetic field effectses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
Appears in Collections:*Documentos Académicos*-- Doc. en Ciencias Básicas

Files in This Item:
File Description SizeFormat 
23.jpg505,68 kBJPEGView/Open


This item is licensed under a Creative Commons License Creative Commons