1. Repositorio Institucional Caxcán
  2. Maestría en Ciencia e Ingeniería de los Materiales
  3. *Documentos Académicos*-- M. en C. e Ing. de los Materiales
Please use this identifier to cite or link to this item: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2563
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dc.contributor47264es_ES
dc.coverage.spatialGes_ES
dc.creatorPech Canul, Maximo A.-
dc.creatorPech Canul, Martin I.-
dc.creatorEcheverría, Marta-
dc.creatorMontoya Davila, Miguel-
dc.date.accessioned2021-06-07T16:01:53Z-
dc.date.available2021-06-07T16:01:53Z-
dc.date.issued2007-05-
dc.identifierinfo:eu-repo/semantics/publishedVersiones_ES
dc.identifier.issn1938-5862es_ES
dc.identifier.urihttp://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/2563-
dc.descriptionCyclic polarization measurements were carried out for Al-10%Si- X%Mg (X: 3%, 6% and 9.5%) alloys in borate solutions with and without additions of 50 mM NaCl. The voltammetric response exhibited some features of oxide film growth consistent with the high field conduction model. However, higher currents and distortions in the voltammetric wave shape compared to those for pure Al were ascribed to a possible incorporation of alloying elements in the oxide film, rendering it more defective, and to the strong electrochemical activity of Mg2Si particles.es_ES
dc.description.abstractCyclic polarization measurements were carried out for Al-10%Si- X%Mg (X: 3%, 6% and 9.5%) alloys in borate solutions with and without additions of 50 mM NaCl. The voltammetric response exhibited some features of oxide film growth consistent with the high field conduction model. However, higher currents and distortions in the voltammetric wave shape compared to those for pure Al were ascribed to a possible incorporation of alloying elements in the oxide film, rendering it more defective, and to the strong electrochemical activity of Mg2Si particles.es_ES
dc.language.isoenges_ES
dc.publisherIOP Sciencees_ES
dc.relationhttps://iopscience.iop.org/article/10.1149/1.2789257es_ES
dc.relation.ispartof10.1149/1.2789257es_ES
dc.relation.urigeneralPublices_ES
dc.rightsAtribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.sourceECS Transactions, Vol. 3, No. 31es_ES
dc.subject.classificationINGENIERIA Y TECNOLOGIA [7]es_ES
dc.subject.otherCorrosiones_ES
dc.subject.otherMg Addittiones_ES
dc.subject.otherAl-Si-Mg Alloyses_ES
dc.titleEffect of Mg Alloying Addition on Dissolution Behavior of Oxide Films in Al-Si-Mg Alloyses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
Appears in Collections:*Documentos Académicos*-- M. en C. e Ing. de los Materiales

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