Thomas–Fermi–Dirac calculations of valence band states in two p-type delta-doped ZnSe quantum wells

Abstract

We present the hole sub-band structure study in two p-type δ-doped ZnSe QW’s. An analytical expression for the Hartree–Fock potential is obtained following the lines of the Thomas–Fermi–Dirac (TFD) approximation. We have analyzed the dependence of the hole energy levels to the impurity density and the interlayer distance between wells. The exchange effects are also included in the present survey. We find that many body effects cannot be ignored because these are really important in the calculation at least in the low concentration regime. We have obtained an energy difference between the top of the valence band and the ground energy of the heavy hole ladder of E0 = 29.0 meV 0 ( 2 791eV) g E - E = . in good agreement with the experimental reports ( DAP E = 2.792 eV) available. We calculate the mobility ratio between double δ-doped QW’s and simple δ-doped QW based on a phenomenological formula. We find the optimum interlayer distance between wells for maximum mobility for three impurity concentrations, which can be of great importance for technological applications.