Please use this identifier to cite or link to this item: http://ricaxcan.uaz.edu.mx/jspui/handle/20.500.11845/632
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dc.contributor39945es_ES
dc.contributor.otherhttps://orcid.org/0000-0003-0087-8991-
dc.coverage.spatialGlobales_ES
dc.creatorRodríguez Vargas, Isaac-
dc.creatorGaggero Sager, Luís Manuel-
dc.date.accessioned2018-08-13T16:15:31Z-
dc.date.available2018-08-13T16:15:31Z-
dc.date.issued2006-02-
dc.identifierinfo:eu-repo/semantics/publishedVersiones_ES
dc.identifier.issn‎0021-8979es_ES
dc.identifier.issn1089-7550es_ES
dc.identifier.urihttp://hdl.handle.net/20.500.11845/632-
dc.identifier.urihttps://doi.org/10.48779/de7x-8850-
dc.description.abstractThe Thomas-Fermi approximation is implemented in two coupled n-type -doped quantum wells in Si. An analytical expression for the Hartree-Fock potential is obtained in order to compute the subband level structure. The longitudinal and transverse levels are obtained as a function of the impurity density and the interlayer distance. The exchange-correlation effects are analyzed from an impurity density of 8 1012 to 6.5 1013 cm−2. The transport calculations are based on a formula for the mobility, which allows us to discern the optimum distance between wells for maximum mobility.es_ES
dc.language.isoenges_ES
dc.publisherAmerican Institute of Physicses_ES
dc.relationhttps://aip.scitation.org/doi/10.1063/1.2168024es_ES
dc.relation.urigeneralPublices_ES
dc.rightsAtribución-NoComercial-CompartirIgual 3.0 Estados Unidos de América*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/us/*
dc.sourceJournal of Applied Physics Vol. 99, 2006es_ES
dc.subject.classificationCIENCIAS FISICO MATEMATICAS Y CIENCIAS DE LA TIERRA [1]es_ES
dc.subject.otherThomas-Fermi approximationes_ES
dc.subject.otherdouble n-typees_ES
dc.subject.otherHartree-Fock potentiales_ES
dc.titleSubband and transport calculations in double -type -doped quantum wells in Sies_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
Appears in Collections:*Documentos Académicos*-- UA Física

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